161 transistor 2SA1858 silicon pnp epitaxial planer type for general amplification features high collector to emitter voltage v ceo . absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C300 C300 C5 C100 C70 1 150 C55 ~ +150 unit v v v ma ma w ?c ?c electrical characteristics (ta=25?c) parameter collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol v ceo v ebo h fe * v ce(sat) f t c ob conditions i c = C100 a, i b = 0 i e = C1 a, i c = 0 v ce = C10v, i c = C5ma i c = C10ma, i b = C1ma v cb = C10v, i e = 10ma, f = 200mhz v cb = C10v, i e = 0, f = 1mhz min C300 C5 30 50 typ 7 max 150 C 0.6 unit v v v mhz pf unit: mm 1:emitter 2:collector 3:base toC92nl-a1 package 2.3 0.2 5.0 0.2 0.7 0.1 4.0 0.2 8.0 0.2 0.7 0.2 13.5 0.5 2.54 0.15 (1.27) (1.27) 0.45 +0.15 ?0.1 0.45 +0.15 ?0.1 13 2 8 6$ = &
5
= & % > 6$ . 1 0 / 1 0
162 transistor 2SA1858 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 C12 C10 C8 C2C6 C4 0 C100 C80 C60 C40 C20 C90 C70 C50 C30 C10 ta=25?c C0.2ma C0.1ma C0.3ma C0.4ma C0.5ma C0.6ma C0.7ma C0.8ma C0.9ma i b =C1.0ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 C2.0 C1.6 C 0.4 C1.2 C 0.8 0 C120 C100 C80 C60 C40 C20 v ce =C10v ta=75?c C25?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) C 0.1 C1 C10 C100 C 0.3 C3 C30 C 0.01 C 0.03 C 0.1 C 0.3 C1 C3 C10 C30 C100 i c /i b =10 ta=75?c 25?c C25?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) C 0.1 C1 C10 C100 C 0.3 C3 C30 0 300 250 200 150 100 50 v ce =C10v ta=75?c 25?c C25?c collector current i c ( ma ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 0 120 100 80 60 40 20 v cb =C10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) C1 C3 C10 C30 C100 0 20 16 12 8 4 18 14 10 6 2 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0240 200 160 40 120 80 1 3 10 30 100 300 1000 3000 10000 v ce =C120v ambient temperature ta ( ?c ) i ceo ( ta ) i ceo ( ta=25?c ) p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb i ceo ta
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